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PD- 91822C
SMPS MOSFET
IRFPS37N50A
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001)
l
VDSS
500V
RDS(on) max
0.13
ID
36A
SUPER-247
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
36 23 144 446 3.6 30 3.5 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Typical SMPS Topologies
l l
Full Bridge Converters Power Factor Correction Boost
Notes
through
are on page 8
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1
12/14/99
IRFPS37N50A
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- 2.0 --- --- --- --- Typ. --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A 0.13 VGS = 10V, I D = 22A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 20 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 23 98 52 80 5579 810 36 7905 221 400 Max. Units Conditions --- S V DS = 50V, ID = 22A 180 ID = 36A 46 nC VDS = 400V 71 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 36A ns --- RG = 2.15 --- R D = 7.0,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
1260 36 44
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.28 --- 40
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 36 --- --- showing the A G integral reverse --- --- 144 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 36A, VGS = 0V --- 570 860 ns TJ = 25C, IF = 36A --- 8.6 13 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFPS37N50A
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
10
4.5V
1
4.5V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
ID = 36A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
100
2.0
TJ = 150 C
1.5
TJ = 25 C
10
1.0
0.5
1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFPS37N50A
100000
VGS , Gate-to-Source Voltage (V)
V G S = 0V, f = 1M Hz C is s = C g s + C g d, C d sSHORTED C rs s = C g d C o ss = C d s + C g d
20
ID = 36A VDS = 400V VDS = 250V VDS = 100V
16
C , C apacitance (pF )
10000
C iss
12
1000
C oss
8
100
4
C rss
10 1 10 100 1000
A
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200
V D S , D rain-to-Source Volta ge (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
I D , Drain Current (A)
100
100
10us
TJ = 150 C
10
100us
TJ = 25 C
1
10
1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000
10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFPS37N50A
40
VDS VGS
RD
D.U.T.
+
I D , Drain Current (A)
30
RG
-VDD
10V
20
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFPS37N50A
1 5V
3000
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
2500
VDS
L
D R IV E R
ID 16A 23A 36A
2000
RG
20V tp
D .U .T
IA S
+ V - DD
A
1500
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
1000
500
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V D Sa v , Av alanche V oltage (V)
580
560
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
540
50K 12V .2F .3F
520
D.U.T. VGS
3mA
+ V - DS
500 0 10 20 30 40
A
I av , Av alanche Current (A)
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFPS37N50A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET(R) Power MOSFETs
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7
IRFPS37N50A
Case Outline and Dimensions -- Super-247
Dimensions are shown in millimeters
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 1.94mH
RG = 25, IAS = 36A. (See Figure 12)
ISD 36A, di/dt 145A/s, VDD V(BR)DSS,
TJ 150C ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 12/99
8
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